au.\*:("VAN DORSSEN, G")
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EXAFS analysis of an Ir/γ-Al2O3 catalyst at elevated temperatures: evidence for a Gaussian pair distribution functionVAN DORSSEN, G. E; KONINGSBERGER, D. C.PCCP. Physical chemistry chemical physics (Print). 2003, Vol 5, Num 16, pp 3549-3556, issn 1463-9076, 8 p.Article
Separation of double-electron and atomic XAFS contributions in x-ray absorption spectra of Pt foil and Na2Pt(OH)6VAN DORSSEN, G. E; KONINGSBERGER, D. C; RAMAKER, D. E et al.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 49, pp 13529-13541, issn 0953-8984, 13 p.Article
Si L-edge structures in the soft X-ray reflectivity of laser-annealed Si surfaces (with Ni overlayers)VAN BRUG, H; VAN DORSSEN, G. E; VAN DER WIEL, M. J et al.Surface science. 1989, Vol 210, Num 1-2, pp 69-84, issn 0039-6028Article
The amplitude reduction factor in EXAFSROY, M; GURMAN, S. J; VAN DORSSEN, G et al.Journal de physique. IV. 1997, Vol 7, Num 2, pp C2.151-C2.152, issn 1155-4339, 1Conference Paper
Characterization of the resolving power of a double multilayer monochromator in the energy range of 600-900 eVPUIK, E. J; VAN DORSSEN, G. E; VAN DER WIEL, M. J et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1991, Vol 9, Num 6, pp 3142-3148, issn 0734-2101Article
EXAFS measurements on the structure of Mo/Si multilayers produced using ion bombardment and increased deposition temperatureVOORMA, H.-J; VAN DORSSEN, G. E; LOUIS, E et al.Applied surface science. 1996, Vol 93, Num 3, pp 221-230, issn 0169-4332Article
Comparing peak asymmetries in EXAFS using RMC and cumulant expansion data analysisVAN DORSSEN, G. E; WILLIAMS, B. T; GURMAN, S. J et al.Journal de physique. IV. 1997, Vol 7, Num 2, pp C2.241-C2.242, issn 1155-4339, 1Conference Paper